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TSHG5410
- Mfr.Part #
- TSHG5410
- Manufacturer
- Vishay Semiconductors
- Package/Case
- -
- Datasheet
- Download
- Description
- Infrared Emitters - High Power 850nm,T-1.75 90mW/sr,+/-18deg.
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- Manufacturer :
- Vishay Semiconductors
- Product Category :
- Infrared Emitters - High Power
- Beam Angle :
- 18 deg
- If - Forward Current :
- 100 mA
- Maximum Operating Temperature :
- + 85 C
- Minimum Operating Temperature :
- - 40 C
- Mounting Style :
- Through Hole
- Packaging :
- Bulk
- Power Rating :
- 180 mW
- Radiant Intensity :
- 90 mW/sr
- Vf - Forward Voltage :
- 1.5 V
- Wavelength :
- 850 nm
- Datasheets
- TSHG5410
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| Part | Manufacturer | Stock | Description |
|---|---|---|---|
| TSHG5210 | Vishay Semiconductors | 26,422 | Infrared Emitters - High Power 850nm, T-1.75 180mW/sr, +/-10deg. |
| TSHG5510 | Vishay Semiconductors | 22 | Infrared Emitters - High Power 830nm,T-1.75 32mW/sr,+/-38deg. |
| TSHG6200 | Vishay Semiconductors | 44,016 | Infrared Emitters - High Power 850nm, T-1.75 180mW/sr, +/-10deg. |
| TSHG6210 | Vishay Semiconductors | 693 | Infrared Emitters - High Power 850nm, T-1.75 230mW/sr, +/-10deg. |
| TSHG6400 | Vishay Semiconductors | 6,424 | Infrared Emitters - High Power 850nm,T-1.75 70mW/sr,+/-22deg. |
| TSHG6410 | Vishay Semiconductors | 17,622 | Infrared Emitters - High Power 850nm, T-1.75 180mW/sr, +/-10deg. |
| TSHG8200 | Vishay Semiconductors | 10,923 | Infrared Emitters - High Power 830mm T-1.75 90mW/sr,+/-18deg. |
| TSHG8400 | Vishay Semiconductors | 8,796 | Infrared Emitters - High Power 830nm, T-1.75 700mW/sr, +/-22deg. |
