MTD8600N-T

Mfr.Part #
MTD8600N-T
Manufacturer
Marktech Optoelectronics
Package/Case
TO-18-2
Datasheet
Download
Description
Phototransistors Photo Diode 880nm

Request A Quote(RFQ)

* Contact Name:
* Company:
* E-Mail:
* Phone:
* Comment:
* Captcha:
loading...
Manufacturer :
Marktech Optoelectronics
Product Category :
Phototransistors
Collector- Emitter Voltage VCEO Max :
30 V
Collector-Emitter Breakdown Voltage :
30 V
Collector-Emitter Saturation Voltage :
200 mV
Dark Current :
100 nA
Fall Time :
10 us
Maximum On-State Collector Current :
50 mA
Maximum Operating Temperature :
+ 100 C
Minimum Operating Temperature :
- 30 C
Mounting Style :
Through Hole
Package / Case :
TO-18-2
Pd - Power Dissipation :
250 mW
Peak Wavelength :
880 nm
Product :
Phototransistors
Rise Time :
10 us
Datasheet
MTD8600N-T

Manufacturer related products

Catalog related products

  • Würth Elektronik
    Phototransistors WL-STCB SMT Phototransistor Chip
  • Würth Elektronik
    Phototransistors WL-STCW 0805 Wtrclr 940nm 100nA 35V150mW
  • Würth Elektronik
    Phototransistors WL-STSB 1002 Black 940nm 100nA 35V150mW
  • Würth Elektronik
    Phototransistors WL-STRB SMT Phototransistor Rev
  • Würth Elektronik
    Phototransistors WL-STCB 0603 Blk SMD 940nm 30nA 100mW

Related products

Part Manufacturer Stock Description
MTD8000M3B-T Marktech Optoelectronics 22 Phototransistors Photo Diode 880nm
MTD8000N4-T Marktech Optoelectronics 220 Photodiodes Photo Diode 880nm
MTD8600N4-T Marktech Optoelectronics 396 Phototransistors Photo Diode 880nm
MTD8600T-T Marktech Optoelectronics 22 Phototransistors Photo Diode 880nm
MTD8600T4-T Marktech Optoelectronics 22 Phototransistors Photo Diode 880nm